Determination of deformation potential constant of the conduction band in Si from electron heating experiments on Si metal-oxide-semiconductor field-effect transistors

Abstract

The authors have investigated the heating process of two-dimensional electrons in conventional n-type Si metal-oxide-semiconductor field-effect transistors by analyzing the amplitudes of Shubnikov-de Haas oscillations at low temperatures. It is found that the observed carrier heating behavior is well explained by the energy relaxation due to acoustic phonon emission via deformation potential coupling. From detailed comparison between experiment and theory, we have determined the deformation potential constant of the conduction band in Si to be 12±2eV, which is larger than commonly accepted value 9eV for bulk Si.