Low-temperature mobilities and energy loss rates of two-dimensional electrons in Si inversion layers

Abstract

We have investigated mobilities of two‐dimensional (2D) in n‐type Si‐metal oxide semiconductor field effect transistors (Si‐MOSFETs) and observed anomalously strong temperature dependence of mobility in the low electron density regions at low temperatures. It is found that the observed strong temperature dependence of mobility was governed by the reduction of the screening effect. Furthermore, we have measured the energy‐loss rates of 2D electrons by analyzing the amplitude of Shubnikov‐de Haas (SdH) oscillations and investigated the electron heating behavior limited by acoustic phonon scattering. From a detail analysis, it is derived that the deformation potential constant of the conduction band in Si is 16 ± 2 eV, which is much larger than the commonly accepted value, 9 eV.