Abstract
The Pd/SiOx/a-Si:H hydrogen sensor has been investigated by photoemission spectroscopy with synchrotron radiation. We measured directly the valence-band discontinuity and the built-in potential during the first stage of formation of the interface obtained by depositing thin amorphous silicon overlayers on Pd/SiOx substrates. Changes of the interface parameters were measured after hydrogen exposure and subsequent hydrogen removal with oxygen. Hydrogen sensitivity is related to hydrogen induced Schottky barrier modulation.
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