Detection of H2S gas sensing performance of sol gel prepared metal oxide (In2O3, SnO2, Sn doped In2O3) thin films

Abstract

Gas monitoring and control of hazardous and polluting gases (CO, H2S, CH4, H2, NH3, and alcohol) are required in industrial and laboratory applications where air quality must be regulated to protect public health, the environment, and security. Transparent conducting metal oxide semiconductors (TCO) have been shown to be extremely sensitive to both reducing and oxidising gases. They are caused by a lack of oxygen, also known as anion deficit. The present emphasis of scientific and technical endeavours is to improve the selectivity, stability, and practicability of response. Wide bandgap semiconducting oxides such as SnO2, In2O3 and Sn doped In2O3 have long been employed in gas sensing. The sensitivity of the gas sensor has increased as the thickness of the metal oxide semiconductor film or particle used to produce it has decreased. In the presence of reducible gases and adsorbed oxygen on the crystal surface, the conductivity is lowered by surface potential, when SnO2 is heated to high temperature, however, conductivity increases noticeably for In2O3 and indium tin oxide films. Indium oxide and tin oxide gas sensors detected H2S gas at working temperatures of 115 °C and 120 °C, respectively. Response and recovery times for indium oxide ranged from 10 s to 26 s and 34 s to 91 s, respectively, and for tin oxide from 3 s to 37 s and 82 s to 40 s. At 100 °C working temperature, ITO sensors with 10% tin concentration had the highest H2S sensitivity.