Detection mechanisms employing single event upsets in dynamic random access memories used as radiation sensors

Abstract

A hardware system is being designed and constructed for the detection of neutrons, with a view to using it in neutron imaging and elemental analysis. A feasibility study was initially carried out to demonstrate that dynamic Random Access Memories (dRAMs) can be used as heavy charged particle detectors and furthermore be made sensitive to neutrons. We are interested, however, in constructing a detector that will be position sensitive, and hence carried out experiments to investigate the relative sensitivity of specific elements within the dRAM chips. The findings from these initial system tests highlight the usefulness of such a device as a position sensitive radiation detector. This paper aims to explain and give a review of most aspects concerning the soft error (SE) performance using dRAM as a radiation sensor.