Abstract
The minimum operation voltage (Vmin) of very unstable cells in silicon-on-thin-buried-oxide (SOTB) six-transistor (6T) static random access memory (SRAM) is analyzed in detail. It is found that the worst cell in 16k SRAM is very unstable and the stability characteristics of the worst cell correspond to approximately 6σ from those of the median cell. It is also found that extraordinarily unstable cells are much more sensitive to VTH change than median cells and that the static noise margin (SNM) and Vmin well correlate only in extraordinarily unstable cells. A simple VTH model for evaluating Vmin is developed and validated by Vmin measured in extraordinarily unstable cells.
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