Abstract
Polycrystalline Si (poly-Si) thin-film is widely used in optical MEMS/NEMS devices. However, the device performance depends on the crystallized structure in the poly-Si thin-film. We performed metal-induced lateral crystallization (MILC) to design the positions of grain boundaries in the poly-Si thin-film. Thin-film cantilever resonators were fabricated to discuss how grain boundaries affect the oscillation characteristics. Compared with a reference resonator, a resonator in which crystallization was well-designed achieved two-fold increase in Q factor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
