Abstract
We report the crystallization of multilayer polycrystalline Si (poly-Si) thin films by green laser annealing with potential applications to three-dimensional devices. We investigated single-, doubleand triple-layer poly-Si thin films crystallized by GLA. The crystallinity of the green-laser-annealed (GLA) poly-Si films was improved by employing a multilayer structure; larger crystal grains were obtained at a lower power than the case of a single layer. We applied the GLA multilayer poly-Si thin films to the fabrication of thin film transistors (TFTs) and thin-film photodiodes. Through a comparison of their performance, we demonstrated the superiority of multilayer crystallization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
