Design, preparation, and characterization of a novel ZnO/CuO/Al energetic diode with dual functionality: Logic and destruction

Abstract

Self-destructing chips have promising applications for securing data. This paper proposes a new concept of energetic diodes for the first time, which can be used for self-destructive chips. A simple two-step electrochemical deposition method is used to prepare ZnO/CuO/Al energetic diode, in which N-type ZnO and P-type CuO are constricted to a PN junction. This paper comprehensively discusses the material properties, morphology, semiconductor characteristics, and exploding performances of the energetic diode. Experimental results show that the energetic diode has typical rectification with a turn-on voltage of about 1.78 V and a reverse leakage current of about 3 × 10−4 A. When a constant voltage of 70 V loads to the energetic diode in the forward direction for about 0.14 s or 55 V loads in the reverse direction for about 0.17 s, the loaded power can excite the energetic diode exploding and the current rises to about 100 A. Due to the unique performance of the energetic diode, it has a double function of rectification and explosion. The energetic diode can be used as a logic element in the normal chip to complete the regular operation, and it can release energy to destroy the chip accurately.