Abstract
Nano-Bulk junction grown over flexible Cu substrate demonstrating photovoltaic response has been developed. The structure of the device fabricated by us is Cu/CuO/CuO-ZnO/ZnO/Ag with the entire device fabrication sequence taking place at a temperature lower than 330 K. A nano-crystalline p-type CuO layer was deposited on Cu substrate using chemical bath deposition at 300 K. The n-type ZnO was solution grown and spin coated over the blend of CuO-ZnO deposited as a buffer between p-type CuO an n-type ZnO layer. The optimized device exhibited an open circuit voltage of 0.25 V, a short circuit current density of 2 × 10–6 A cm−2, a fill factor of 8% and efficiency of 0.11%. A space charge limited conduction mechanism was identified for the best device structure. The optimized cell structure had a diode ideality factor of 2.11 and work function of 3.28 eV.
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