Abstract
Double gate (DG) MOSFETs have recently attracted much attention for both logic and analog/RF applications. In this paper we focus on the design consideration of DG devices for RF applications. The different influences of key structural parameters on RF characteristics are comprehensively studied and optimized, including body thickness, spacer length and source/drain raised height. The impact of the fluctuation of geometrical parameters of DG devices on RF figures-of-merit are estimated. In addition, different dominance of structural parameters for RF applications is studied in DG devices with different channel lengths. The dependence of RF performance on the gate length downscaling of DG devices is also discussed. The obtained results give the design guidelines for DG devices for RF applications.
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