Abstract

We consider the designing of double material gate oxide (DMGO) silicon-germanium on insulator (SGOI) double gate (DG) MOSFET. The fundamental objective in this work is to modify the channel potential, electric field and electron velocity for improving leakage current, transconductance (g m ) and transconductance generation factor (TGF). Using 2-D simulation, we show that the DMGO-SGOI-DG MOSFET exhibits higher electron velocity at source side and lower electric field at drain side as compare to ultra-thin body (UTB) DG MOSFET. Moreover it demonstrates a significant improvement in g m and TGF in comparison to UTB-DG MOSFET.

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