Abstract
Recently, tunnel field-effect transistors (TFETs) have been regarded as next-generation ultra-low-power semi-conductor devices. To commercialize the TFETs, however, it is necessary to improve an on-state current caused by tunnel-junction resistance and to suppress a leakage current from ambipolar current (IAMB). In this paper, we suggest a novel TFET which features double gate, vertical, and trapezoid isosceles channel structure to solve the above-mentioned technical issues. The device design is optimized by examining its electrical characteristics with the help of technology computer-aided design (TCAD) simulation. As a result, double-gate isosceles trapezoid (DGIT) TFET shows a much better performance than the conventional TFET in terms of ON-state current (ION), IAMB, and gate-to-drain capacitance (CGD). It is confirmed that an inverter composed of DGIT-TFETs can operate with less than 1 ns intrinsic delay time and negligible voltage overshoot.
Highlights
Over the past several decades, complementary metal-oxide-semi-conductor (CMOS) technologies have been scaled down to improve integration densities and performance [1,2,3]
Since the power dissipation is proportional to the square of supply voltage (VDD), future CMOS devices should be operating with low VDD
MOS field-effect transistors (MOSFETs) have a limit of 60 mV/dec subthreshold swing (S) at room temperature because they are based on a thermionic carrier injection
Summary
Over the past several decades, complementary metal-oxide-semi-conductor (CMOS) technologies have been scaled down to improve integration densities and performance [1,2,3]. Because TFETs inject charges through a band-to-band tunneling (BTBT) mechanism from a source to a channel, abrupt switching is possible compared to conventional MOSFETs with drastically reduced IOFF [12,13,14]. They are able to inherit MOSFETs technologies with minimum cost and maximum efficiency with the help of similar structure and process to MOSFETs used in current CMOS technologies [15]. The vertical structure is advantageous, for increasing the integration density without any areal penalty, and for adopting a selective epitaxial layer growth (SEG) technique to improve ION/IOFF with the help of heterojunction [26]. The modified local density approximation (MLDA) model is used for the consideration of quantum effect
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