Design, optimization, and performance analysis of GaP/Si heterojunction Fin-TFET with MoS2 nanoribbon channel

Abstract

This article presents the design and optimization of GaP/Si heterojunction Fin-TFET with a MoS2 channel. The elevated fin structure, coupled with ultrathin MoS2 layers and the tuneable bandgap properties of MoS2 material, significantly enhances gate control over the channel and improves device performance. Additionally, the GaP/Si heterojunction with a heavily doped n-type source pocket leads to a narrow barrier junction, promoting Band-to-Band Tunneling (BTBT). The optimized Fin-TFET boasts exceptional electrical characteristics: a high ON-current (7.72 × 10−5 A/μm), an ultra-low OFF-current (4.16 × 10−17 A/μm), and leading to an outstanding ION/IOFF ratio (7.23 × 1012). Furthermore, the device demonstrates a steep subthreshold slope (SS) of 6 mV/dec (point) and 16.8 mV/dec (average), alongside impressive analog performance with a transconductance (gm) of 2.75 × 10−4 S, a cut-off frequency (fc) of 1.3 × 1012 THz, and a gain-bandwidth product (GBP) of 0.17 × 1012 THz. The entire analysis was conducted utilizing the Sentaurus TCAD-3D simulation tool.