Design of Ternary SRAM Cell Based on Level Shift Ternary Inverter

Abstract

In terms of memory, multivalued logic can be the fitting logic for the existing binary logic. Ternary logic contains three symbols in place of two symbols used in the binary logic, i.e., 0, 1, 2. More information can be stored with the help of these three symbols. SRAM cell is widely used in the digital circuit. The SRAM cell designed using the ternary logic can be used in the design of large memory arrays designed using ternary logic. The traditional ternary inverter which is used in the design of the traditional ternary SRAM cell is unable to store the proper values for the second state, there is a voltage level drop, which in turn affects the data read/write value of the SRAM cell designed using this traditional ternary inverter. Hence there is a need to design the ternary inverter cell which can give the proper output voltage level of all three states of the ternary logic. The level shift ternary inverter is designed to fulfill this disadvantage. The ternary inverter is designed in order to achieve the ideal DC characteristics, and the same level shift ternary inverter is used in the design of level shift ternary SRAM. This ternary SRAM stores the data properly at read/write signal. The traditional ternary inverter and traditional ternary SRAM, level shift ternary inverter and level shift ternary SRAM are implemented in Cadence 45 nm technology. The traditional ternary inverter consumes 2.37 μW power, and the level shift ternary SRAM consumes 2.43 μW power. The traditional ternary SRAM consumes 3.012 μW and level shift ternary SRAM consumes 3.14 μW. At the cost of a little bit increased power and the number of transistors, the traditional ternary SRAM can be replaced with level shift ternary SRAM. This level shift ternary SRAM stores all the voltage levels at all three levels. The same level shift ternary SRAM cell can be used for the design of large memory arrays.