Abstract
This chapter analyzes a ladder-type filter with a CMOS low-noise amplifier (LNA) in the frequency band of 925–960 MHz. The filter is developed on a structure with three layers of a ZnO film and aluminium (Al) electrodes on a silicon (Si) substrate with Ti/Au for metallization. This filter is composed of six resonators on the same port. The amplifier provides a forward gain of 10.6 dB with a noise figure of only 1 dB while drawing 8.4 mA from a 2.5 V power supply. The structure carried out for the resonators presents the insertion loss of 2.2 dB (< 3 dB) and broadband width of 25MHz. The fabrication of the filter and LNA is independent, and that influences the time of manufacture. The amplifier has a suitable gain, low noise, low supply voltage, and dissipates a low power. It is conceived for the application because a majority of these parameters are calculated and simulated.
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