Abstract
In this work, a high density phase-change memory (PCM) array with advanced side bottom-electrode-contact (BEC) scheme, which is highly compatible with current complementary metal oxide semiconductor technology, has been proposed. The data storage capacity has been doubled than orthodoxy PCM structure and the contact area between bottom electrode and PCM cell shrinks from 20096 nm2 to 600 nm2. The optimized titanium nitride (TiN) film as side BEC is 10 nm due to trading off between RESET current and SET resistance. As simulation results presented, the PCM cell with optimized side BEC thickness shows lower SET current of 0.06 mA, lower RESET current of 0.24 mA and higher resistance ratio of 10(3) between amorphous and crystalline phases. This side BEC process scheme is cost-effective process accompanying with tungsten via formation to minimize programming power. Meanwhile, based on the three-dimensional (3D) side BEC numerical model, it is manifested that there is cross-talk immunity in adjacent PCM cells during programming.
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