Design of Phased Array T/R Component Microsystem Based on Heterogeneous Integration Technology

Abstract

An X-band silicon-based 2×2 phased array T/R module was developed based on MEMS technology and three-dimensional heterogeneous integration technology such as through-silicon via (TSV). The module uses a transceiver integrated multifunction chip solution and is packaged in two layers of silicon: upper layer integrated low noise amplifier, power amplifier, switch, power modulation driver, PMOS and other chips; lower layer integrated multi-function chip, serial-to-parallel chip, logic operation chip. Two-layer silicon package are stacked by solder balls. The T/R module sample’s size is 20mm×20mm×3mm. The test results show that at 8-12GHz, the transmit power is higher than 29dBm, the transmit gain is 20dB, the receive gain is 29dB, the noise figure (NF) is 3dB, and the switch isolation is 37dB.