Abstract
The gate-all-around (GAA) silicon-on-insulator (SOI) Schottky barrier (SB) nano-wire (NW) MOSFET was recently proposed for low-power and high-frequency analog and radio frequency (RF) circuits. But their use in low-power and high-frequency analog/RF circuits is still under investigation. In this work, basic analog signal processing circuits using gate-all-around SOI-SB-NW MOSFETs are designed for low-power and high-frequency applications. These basic and necessary analog processing circuits are designed for ± 0.3 V and ± 0.25 V power supplies to work on frequencies up to 10 GHz. The analog/RF characteristics of the GAA SOI-SB MOSFET are compared with those of the GAA SB NW MOSFET. The SOI-SB NW MOSFET shows improvements in early voltage, output resistance, and transconductance generation factor. The Silvaco TCAD simulator is used to obtain the results and perform numerical simulations. Simulation results show good analog/RF performance of the analog processing circuits.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: International Journal of High Speed Electronics and Systems
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.