Abstract
Junction termination extension (JTE) structures for GaN power Schottky rectifiers were investigated using a quasi-three-dimensional simulator. The use of single JTE edge termination was found to produce an almost fivefold increase in reverse breakdown voltage ( V B) over an unterminated rectifier fabricated on the same bulk GaN substrate. The use of p + guard rings or planar junction termination with oxide field plates also offers significant enhancements in V B relative to unterminated rectifiers. V B was found to be a strong function of the JTE doping concentration and the p + guard-ring spacing.
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