Abstract
In this paper, vertical diamond Schottky barrier diode with a beveled junction termination extension is designed by using Silvaco TCAD. We firstly investigate the effects of the pn junction termination extension on the electrical performances to optimize the doping concentration. In addition, the beveled structure with an angle of 45° decreases the current conduction path slightly, but it also enhances the reverse breakdown voltage effectively. By combining the junction termination extension and beveled structures, a new termination structure is proposed for the vertical diamond Schottky barrier diode. Under forward bias, the depletion region introduced by the pn junction hindrances the current conduction slightly and increases the on-resistance. However, the electric field crowding phenomenon is alleviated drastically under reverse bias, resulting in a more uniform electric field distribution and high breakdown voltage. Therefore, the beveled junction termination structure is promising to balance the on-resistance and the reverse breakdown voltage of the diamond Schottky barrier diode.
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