Abstract

AbstractThis paper proposes a single pole double throw (SPDT) switch based on the triple‐coupled transformer. The triple‐coupled transformer utilizes a novel structure with three stacked coupled inductors which are placed in nonconcentric positions to ensure the isolation of SPDT switch. The SPDT switch obtains additional optimization space to improve insertion loss performance under the premise of reassuring isolation. The equivalent circuit model is built to interpret the mechanism of the SPDT switch and transformer. The proposed switch is implemented with the 65‐nm CMOS process, the simulated results show the isolation between input‐to‐output ports are better than 25 dB at 24–38 GHz. The proposed SPDT switch achieves a minimum insertion loss of 1.56 dB with compact chip size 625 × 370 μm2 (with PADs).

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