Abstract
Aiming at the problems of poor current control and high gate leakage current of traditional static induction transistors, we designed a new structure of GaN-based static induction transistor (SIT) using TCAD software. The SIT uses a new type of fin channel and a high-work function gate metal. In addition, this work simulates the electrical properties of different structure SIT and explores the influence of the channel shape on the channel barrier voltage. According to the simulation results, the GaN SIT has the following properties: high breakdown voltage (BV=830V), strong current control capability (switch current ratio I on/I off=1×1014), high turn-on current density, and low device conduction loss.
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