Abstract
Gate-all-around (GAA) MOSFETs relevant for the 11.9-nm CMOS technology node are optimized with device dimensions following the scale length rule. Variability in transistor performance due to systematic and random variations is estimated with the aid of TCAD 3-D device simulations, for these well-tempered GAA structures. The tradeoff between read stability and write-ability of 6-T static RAM cell designs implemented with GAA MOSFETs with either square or rectangular nanowire channel regions is then investigated, and a calibrated transistor <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">\({\boldsymbol {{I}}}\) </tex-math></inline-formula> – <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">\({\boldsymbol {{V}}}\) </tex-math></inline-formula> compact model is used to estimate cell yield. The results indicate that a rectangular (thin and wide) channel design achieves the optimal balance between the read yield and write yield and hence provides for the lowest minimum cell operating voltage, estimated to be <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">\(\sim 0.45\) </tex-math></inline-formula> V, as well as smaller cell area.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.