Design of GaN and SiC 5–20kV vertical superjunction structures

Abstract

We report on the design, simulations and optimization of 5-20kV GaN and SiC vertical superjunction structures. The space charge in the GaN and SiC superjunction pillars have been optimized using superjunction p-n diode, and the best trade-off between breakdown voltage (BV) and specific on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on, sp</sub> ) have been obtained by varying the pillar dosage, length and width.