Design and Simulation of Novel Enhancement Mode 5–20 kV GaN Vertical Superjunction High Electron Mobility Transistors for Smart Grid Applications

Abstract

We report on the design, simulations and optimization of a novel enhancement mode 5–20 kV GaN vertical superjunction (SJ) high electron mobility transistor (HEMT). We optimize the space charge in GaN pillars using GaN SJ p–n diode for the best trade-off between breakdown voltage (BV) and specific on-resistance (Ronsp), by varying the pillar dosage, length and width. The resulting GaN SJ field effect transistor (FET) structure is projected to have, for example, Ronsp of 4.2 mΩ cm2 with BV of 12.4 kV.