Design of enlarged-asymmetric-power single-mode silicon evanescent lasers with asymmetric distributed feedback gratings

Abstract

Great achievements in the bonded III–V lasers have pushed the productization process of silicon photonic chips. In this work, we report the design of silicon evanescent lasers with asymmetric gratings, which can provide high output power and stable single-longitudinal-mode operation. The high coupling efficiency and low threshold current density are achieved by linearly expanding the width of rib waveguide from 0.4 µm to 2 µm through 150 µm taper coupler. By optimizing the λ/4 phase-shift position ratio from conventional 0.50 to 0.64, the ratio of output power at both sides of the bonded lasers (P2/P1) is improved from1.0 to 5.0, and the normalized grating coupling coefficient (κL) remains at 2.78. By optimizing the duty cycle at one side of λ/4 phase-shift from 0.5 to 0.8 and another side remains at 0.5, P2/P1 is 3.3, and κL lowers from 2.78 to 2.21. Besides, keeping the phase-shift position ratio at 0.64 while changing the duty cycle to 0.7, P2/P1 increases significantly to 7.5 with κL of 2.59. This work provides a step forward towards the development of high-power silicon-based light sources.