Abstract
Owing to its outstanding electro-thermal properties, such as the highest thermal conductivity (22 W/(cm∙K) at room temperature), high hole mobility (2000 cm2/(V∙s)), high critical electric field (10 MV/cm) and large band gap (5.5 eV), diamond represents the ultimate semiconductor for high power and high temperature power applications. Diamond Schottky barrier diodes are good candidates for short-term implementation in power converters due to their relative maturity. Nonetheless, diamond as a semiconductor for power devices leads to specificities such as incomplete dopant ionization at room temperature and above, and the limited availability of implantation techniques. This article presents such specificities and their impacts on the optimal design of diamond Schottky barrier diodes. First, the tradeoff between ON-state and OFF-state is discussed based on 1D analytical models. Then, 2D numerical studies show the optimal design of floating metal rings to improve the effective breakdown voltage. Both analyses show that the doping of the drift region must be reduced to reduce leakage currents and to increase edge termination efficiency, leading to better figures of merit. The obtained improvements in breakdown voltage are compared with fabrication challenges and the impacts on forward voltage drop.
Highlights
During the last decade, wide bandgap power devices have been successfully developed
2D numerical studies show the optimal design of floating metal rings to improve the effective breakdown voltage
2 of 18 better figure of merits with diamond power devices, it is of the highest importance to reach an experimental diamond voltage drift region and is its as combination with the to Schottky barrier behavior is detailed. voltage
Summary
Wide bandgap power devices have been successfully developed. One of the key benefits of wide bandgap power devices is to reach the same conduction losses with unipolar devices as those of legacy bipolar Silicon power devices. 2 of 18 better figure of merits with diamond power devices, it is of the highest importance to reach an experimental diamond voltage drift region and is its as combination with the to Schottky barrier behavior is detailed. Haverequirements, been made in substrate crystalline and devices have and in orderTremendous to meet theachievements power systems efforts are requiredquality, to improve the voltage been fabricated demonstrating the high potential of diamond for power electronics applications. Since the first development of diamond Schottky barrier diodes (SBDs) in the early 1990s [1,2,3], mature/advanced power switches for integration into power systems.
Sign-in/Register to view highlights & summary 
Published Version (
Free)
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call