Abstract
A wideband Low Power Single Pole 6-Throw (SP6T) antenna switch has been designed for GSM/DCS/802.11b mobile standards using a newly improved architecture and fabricated using a pseudomorphic depletion mode 0.18 μm HEMT GaAs process. The switch exhibits less than 1 dB insertion loss and isolation performances from up to 53 dB at 0.8 GHz down to 42 dB at 2.5 GHz. The circuit DC power consumption is less than 500 μW in full power transmission condition and makes it suitable for use in mobile terminals like mobile phones or PDAs. The paper presents simulation results validated by experimental measurements on an IC prototype.
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