30 GHz SPDT switch design using 0.15 μm GaAs technology for microwave applications

Abstract

In this paper, very low loss and high isolation single pole double throw (SPDT) switch design for millimeter wave applications using pseudomorphic high-electron mobility transistor (pHEMT) is presented. The MMIC switch design is developed using a commercial 0.15 mum GaAs pHEMT technology. At the operating frequency of 30 GHz, the SPDT switch has 1.948 dB insertion loss and 24.526 dB of isolation. It also demonstrates 26.85 dBm of input P1dB gain compression point (P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub> ) and 23.28 dBm of output P1dB.