Abstract
A novel closed-loop SOI MEMS resonant electrostatic field sensor (EFS) has been designed in this paper. The sensor architecture has three major blocks: a vibration shutter, sensing electrodes, and a closed-loop driving electrode that feeds back to the shutter. With a phase and an amplitude closed loop feedback control, the sensor can be adjusted automatically to operate at its resonant frequency. Prototyped by the SOI fabrication process, the device has a lower driving voltage and a higher quality factor (Q) over existing electrostatic comb driven EFS. An improved uncertainty of 2.1% is achieved for the SOI device operating in ambient air in a measured range of 0–50 kV/m.
Published Version
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