Abstract
This paper presents the design and simulation results of a novel 200GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAsSchottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5dB was achieved with 6mW of LO power. Over an RF band of 183–220GHz, the double sideband mixer conversion loss is below 15dB.
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