Abstract
In this paper, using a δ-doping dual-channel structure and GaAs substrate, a real space transfer transistor (RSTT) is designed and fabricated successfully. It has the standard Λ-shaped negative resistance I–V characteristics as well as a level and smooth valley region that the conventional RSTT has. The negative resistance parameters can be varied by changing gate voltage (VGS). For example, the PVCR varies from 2.1 to 10.6 while VGS changes from 0.6 V to 1.0 V. The transconductance for IP (ΔIP/ΔVGS) is 0.3 mS. The parameters of VP, VV and threshold gate voltage (VT) for negative resistance characteristics arising are all smaller than the value reported in the literature. Therefore, this device is suitable for low dissipation power application.
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