Abstract
We reported the standard ¿¿¿ shape negative differential resistance as well as a level and smooth valley region in real space transfer transistor (RSTT) with dual-quantum-well channel, which are formed by ¿-doping GaAs quantum-well and InGaAs/GaAs heterojunction quantum-well. The highest peak-to-valley current ratio (PVCR) of RSTT reaches 4 at room temperature. The highest peak current density transconductance (¿J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</sub> /¿V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</sub> ) is 130 ms/mm, which demonstrates the control ability of gate to J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</sub> . The mechanism of obvious NDR of RSTT can be explained that the hot electron in the InGaAs U-shaped quantum-well channel transfers into V-shaped ¿-doping GaAs quantum-well channel, and the hot electron transfers into gate electrode from V-shaped ¿-doping GaAs quantum-well channel. This novel NDR device would be expected to applied in NDR circuits to instead of RTD+HEMT.
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