Ensemble Monte Carlo simulation of velocity modulation transistors (VMT) and real space transfer (NERFET, CHINT) devices

Abstract

Numerical simulation of velocity-modulation field effect transistors and real-space transfer transistors are presented. Using self-consistent particle-field Monte Carlo analyses, we assess possible advantages of these novel device structures with respect to their switching speed. Our study shows that current switching can be achieved by the velocity modulation concept. The simulations performed for real space transfer devices are in agreement with experiments and reproduce all prominent features of real space transfer structures such as, negative differential resistance, saturation of drain and substrate (injection) current at high source-to-drain voltages, and the negative transconductance ( Δ I D,sat Δ V sub <0 ) in the saturated drain current.