Abstract
Scaling the programming voltage, while still maintaining 10-year data retention time, has always been a big challenge for polysilicon–oxide–nitride–oxide–silicon (SONOS) researchers. We describe progress in the design and scaling of SONOS nonvolatile memory devices. We have realized −9+10 V (1 ms) programmable SONOS devices ensuring 10-year retention time after 10 7 erase/write cycles at 85°C. Deuterium anneals, applied in SONOS device fabrication for the first time, improves the endurance characteristics when compared with traditional hydrogen or forming gas anneals. We introduce scaling considerations and process optimization along with experiments and SONOS device characterization. A field programmable gate array-based measurement system is described for the dynamic characterization of SONOS nonvolatile memory devices.
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