Abstract
In contrast to conventional forming gas annealing (FGA), high-pressure deuterium annealing (HPD) shows a superior passivation of dangling bonds on the Si/SiO2 interface. However, research detailing the process optimization for HPD has been modest. In this context, this paper demonstrates the iterative impact of HPD for the better fabrication of semiconductor devices. Long-channel gate-enclosed FETs are fabricated as a test vehicle. After each cycle of the annealing, device parameters are extracted and compared depending on the number of the HPD. Based on the results, an HPD condition that maximizes on-state current (ION) but minimizes off-state current (IOFF) can be provided.
Highlights
As semiconductor devices are scaled down to improve the packing density and device performance, device reliability, associated with the gate dielectric, has been degraded
Since the equivalent oxide thickness (EOT) is extremely scaled for a better gate controllability, devices are more vulnerable to damage stemming from hot-carrier injection (HCI), biastemperature instability (BTI), Fowler–Nordheim Tunneling (F–N) tunneling, and even total ionizing dose (TID) [1]
High pressure deuterium annealing (HPD), which is performed under deuterium ambient diluted by nitrogen, is promising for modern device fabrication
Summary
As semiconductor devices are scaled down to improve the packing density and device performance, device reliability, associated with the gate dielectric, has been degraded. Various fabrication processes to improve the gate dielectric reliability such as lightly doped draining [2], fluorine ion implantation [3], forming gas annealing [4], and electrothermal annealing [5] have been proposed. The passivated Si-D bonding is difficult to break compared to Si-H, and the device lifetime can be further improved. It is difficult to figure out how long long and at what temperature HPD should be applied to maximize the device reliability. An optimized HPD cycle is proposed to maximize device reliability. In order to tosolely solelyinvestigate investigatethe the impact deuterium annealing, the materials as as device structure and fabrication processing for a test vehicle (TV).
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