Design Considerations for 2-D Dirac-Source FETs—Part II: Nonidealities and Benchmarking

Abstract

In Part I of this article, we discussed the basic operation of 2-D Dirac-source field-effect transistors (DS-FETs) and studied the impact of key device parameters on the device performance. In this article, we continue to study the impact of nonidealities on the performance of DS-FETs, such as graphene disorder and rethermalization, as well as ways to mitigate them. In addition, we study the performance improvement by introducing a bandgap in the graphene source. Finally, we benchmark the performance of DS-FETs for different channel materials, providing a guide for the proper choice of material for 2-D DS-FETs.