Abstract
Dirac-source field-effect transistors (DS-FETs) have been proposed as promising candidates for low-power switching devices by leveraging the Dirac cone of graphene as a low-pass energy filter. In particular, using 2-D materials as the channel in a DS-FET is of interest for ultimate scaling purposes. In this article, we investigate the design considerations for 2-D DS-FETs using ballistic simulations based on the Landauer formalism. We study the impact of several key device parameters on the device performance, such as graphene doping, Schottky barrier heights, and effective mass of the 2-D channel. In Part II of this article, we study the impact of nonidealities on the performance of DS-FETs and benchmark the performance of DS-FETs for different channel materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
