Abstract
ABSTRACT This work presents a sub-45 nm application-specific nanoscale single-device non-aligned double gate inverter (NADGI) with minimised gate and drain contacts. NADGI uses two devices of 25 nm channel length, i.e. NADGPFET and NADGNFET, giving maximum ON-current of 1.16 mA and 1.36 mA, respectively. The dynamic performance of the proposed structure was evaluated by applying ultra-high frequency, super-high frequency, and varying supply voltage/load capacitor. This work uses graphical method to determine the optimal supply voltage of the NADGI, the estimated values at 1 GHz and 10 GHz input frequency were 0.6 V and 0.7 V, respectively. When compared with the past works, the proposed inverter shows 82.4% improvement in propagation delay and 40% reduction in the supply voltage. Therefore, with improved design structure and response, the proposed inverter can be suitably used for high-frequency and low-power circuit design.
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