Design and simulation of a silicon carbide power module with double‐sided cooling and no wire bonding

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AbstractThis paper presents a novel 1200 V/81 A double‐sided cooling (DSC) half‐bridge module; this module consists of two SiC MOSFETs bare die, AlN‐DBC substrates, three types of metals spacers, power and signal terminals. The bonding wire is eliminated completely in this proposed module as two patterned spacers are used in the connected gate and source pad. This structure can reduce the parasitic parameters and allow the conduction of heat dissipation through top and bottom chips. The simulations of parasitic parameters and thermal resistance are carried out by ANSYS Q3D extractor and COMSOL Multiphysics. Results show that the proposed module has a low parasitic inductance of 4.22 and 5.41 nH in both the gate and power loop. The junction temperature is reduced by 30% under the same power loss. Prototypes of the module lay out and fabrication process are presented for the proposed module. Static experiments validated the design.