Design and simulation of a new silicon pixel detector with equal width floating electrodes

Chaosheng Wu,Xuanang Huang,Zheng Li,Yongguang Xiao

doi:10.1063/5.0041850

Chaosheng Wu, Xuanang Huang + Show 2 more

Open Access

https://doi.org/10.1063/5.0041850

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Abstract

In order to reduce the noise of traditional silicon pixel detectors, a new type of low-capacitance silicon pixel detector with three floating electrodes is proposed in this paper, which reduces the cathode area while keeping the volume unchanged. A TCAD simulator is used to simulate the electrical performance of the detector and obtain electrical characteristics including depletion voltage, capacitance, and leakage current. According to the results of simulation and calculation, compared with the traditional silicon pixel detector with the same volume, the capacitance of the detector without floating electrodes was reduced by 68%, the capacitance of the detector with three floating electrodes was reduced by 68%, and the leakage current was reduced by two orders of magnitude.

Highlights

A pixel detector is an optical device that can convert light radiation into electrical signals
While reducing the area of the cathode, in order to ensure that the silicon pixel detector still has a better collection efficiency of electron–hole pairs, and to make the detector more depleted and obtain a uniform potential distribution, a new structure of the detectors with three floating electrodes is proposed in this paper
A TCAD simulator is used for electrical simulation, and comparison between the traditional silicon pixel detector, the small capacitance silicon pixel detector without a floating electrode, and the small capacitance silicon pixel detector with three floating electrodes is carried out

Summary

INTRODUCTION

A pixel detector is an optical device that can convert light radiation into electrical signals. Silicon pixel detectors possess great energy resolution and position resolution. Such as the ATLAS detector at the Large Hadron Collider (LHC) in Europe, the sub-detector closest to the beam center is the pixel detector.. Pixel capacitance determines the noise performance of a pixel detector, and it is an important input parameter for pixel read-out electronics design.. The capacitance of a traditional pad/pixel detector, with the signal electrode covering almost the entire detector area, is high. While reducing the area of the cathode, in order to ensure that the silicon pixel detector still has a better collection efficiency of electron–hole pairs, and to make the detector more depleted and obtain a uniform potential distribution, a new structure of the detectors with three floating electrodes is proposed in this paper. A TCAD simulator is used for electrical simulation, and comparison between the traditional silicon pixel detector, the small capacitance silicon pixel detector without a floating electrode, and the small capacitance silicon pixel detector with three floating electrodes is carried out

STRUCTURE

FULL DEPLETION VOLTAGE

CAPACITANCE

LEAKAGE CURRENT

Findings

CONCLUSION