Abstract
New designs of silicon pixel detectors with n +/n/p + and double-sided multiguard ring structures have been developed for more radiation-tolerant CMS forward pixel sensors. In a later design modification, guard rings on the n + side are replaced with a single wide (640 μm) n + implant, and the entire n + side and the edge region of the p + side are grounded. All designs were fabricated from both normal and oxygen-enriched silicon wafers, and radiation hardness effects for neutron (1 MeV equivalent) and proton (24 GeV) irradiation of these detectors were compared. Other electrical characteristics such as leakage current, potential distribution over guard rings and full depletion voltage were tested, using standard techniques of I–V, V–V, C–V and TCT before and after irradiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
