Design and 3D TCAD simulation of a novel floating-electrode silicon pixel detector

Abstract

A novel floating-electrode silicon pixel detector has been proposed. The novel configuration of the floating electrode in the silicon pixel detector reduces the size of the collecting cathode and decreases both the capacitance and leakage current of the detector compared to the conventional silicon pixel detector. For the design, we used a 200 × 200 µm2 detector as the model to analyze the impact of varying numbers of floating rings on the electrical performance [Wu et al., AIP Adv. 11(2), 025315 (2021)]. We used Technology Computer Aided Design simulation to compare and analyze the simulated electric field, potential, capacitance, and breakdown voltage of the detector. The results show that decreasing the gap-to-width ratio of the floating electrode, as well as increasing the quantity of floating rings, enhances the detector’s performance.