Design and performance analysis of Si-SiGe heterostructure based double gate feedback FET

Abstract

The design and performance analysis of a Si-SiGe heterostructure-based double gate feedback field-effect transistor (HDG FBFET) are presented in this paper. The proposed HDG FBFET is capable of providing high on current (3 × 10−4 A/μm) with a large I ON /I OFF ratio (3 × 1011) and is scalable up to 20 nm channel length. Its exceptionally steep switching characteristics (SS < 1 mV/decade) and ability to switch ON/OFF at lower gate voltage due to the use of smaller band-gap material (Si1−x Ge x ) in channel-2 and drain regions make it suitable for use in low power applications. A significant hysteresis window of 4.99 V is also achieved by the device, which can be extremely helpful for memory applications. Moreover, a comprehensive investigation of the nature of hysteresis in relation to the different device parameters has also been carried out. The designing of the device structure and all of the electrical performance characterization have been done using the Sentaurus TCAD tool.