Abstract
Sub-micrometer channel length (0.5μm) organic thin-film transistors (OTFTs) are demonstrated using a process flow combining nano-imprint lithography (NIL) and self-alignment (SA). A dedicated test structure was designed and samples were fabricated on 4-in. plastic foils using a p-type sublimated small molecule (pentacene) as semiconductor. Field-effect mobilities, in saturation, between 0.1 and 1cm2/Vs were obtained not only for the supermicron OTFTs but also for the submicron OTFTs. Those devices were used to select a model based on the “TFT Generic Charge Drift model” which works well for a broad range of channel lengths including the submicron OTFTs. We show that these OTFTs can be accurately modeled, thus giving access to complex circuit simulations and design.
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