Abstract
The design of a four-valued multiplexer using the negative differential resistance (NDR) circuit is demonstrated. The NDR circuit used in this work is made of the Si-based metal–oxide–semiconductor field-effect-transistor (MOS) and the SiGe-based heterojunction bipolar transistor (HBT). However we can obtain the NDR characteristic in its combined I–V curve by suitably arranging the MOS parameters. This novel multiplexer is made of MOS–HBT–NDR-based decoders and inverters. The fabrication is based on the standard 0.35μm SiGe BiCMOS process.
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