Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure

Ricardo A Donaton,Anita Madan,Ken Rim,Dureseti Chidambarrao,Anthony Domenicucci,Jeff Johnson,Xi Li,Judson Holt,Clement Wann,Jinghong Li,Yaocheng Liu,Paul Chang,W Kirklen Henson

doi:10.1109/iedm.2006.346813

Design and Fabrication of MOSFETs with a Reverse Embedded SiGe (Rev. e-SiGe) Structure

Ricardo A Donaton, Anita Madan + Show 11 more

https://doi.org/10.1109/iedm.2006.346813

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Publication Date: Jan 1, 2006

Citations: 36

Affiliation: IBM (United States)

#Fabrication Of MOSFETs #SiGe Stressor + Show 8 more

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Abstract

A novel device structure containing a SiGe stressor is used to impose tensile strain in nMOSFET channel. 400MPa of uniaxial tensile stress is induced in the Si channel through elastic relaxation/strain of the SiGe/Si bi-layer structure. This strain results in 40% mobility enhancement and 15% drive current improvement for sub-60nm devices compared to the control device with no strain

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