Abstract
We have studied p-channel advanced SOI MOSFETs using double SiGe heterostructures fabricated by the combination of SIMOX and high-quality strained-Si/SiGe regrowth technologies, in order to introduce higher strain in Si channel. It was revealed that this double SiGe structure of second Si/sub 0.82/Ge/sub 0.18/Si/sub 0.93/Ge/sub 0.07/allows the second SiGe layer to relax by about 70%, because of the elastic energy balance between the second and the first-SiGe layers. As a result, the strain of Si layer on this double SiGe structure becomes higher than that of the single SiGe structure. Strained SOI p-MOSFETs using the double layer SiGe structure exhibited higher hole mobility than that of strained-SOI MOSFETs with single Si/sub 0.9/Ge/sub 0.1/ structure. The hole mobility enhancement of 30% and 45% was achieved in the strained-SOI MOSFETs with double SiGe structures, compared to that of the universal curve and the control-SOI MOSFETs, respectively.
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