Abstract
This letter proposed an embedded silicon carbide (SiC) power module with low parasitic inductance and low thermal resistance for high-frequency and high-temperature applications. The SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> s were oriented in a face-down configuration with Cu connecting blocks, contributing to better switching performance and heat dissipation. The simulation results showed that the total parasitic inductance was lower than 300 pH. Double pulse test and thermal resistance experiments compared with a commercial package showed that the switching loss and the junction-to-case resistance of the proposed module were reduced by 23% and 35%, respectively.
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